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| SEMICONDUCTOR TECHNICAL DATA ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS FEATURES 2.5 Gate Drive. Low Threshold Voltage : Vth=0.51.5V. High Speed. Small Package. Enhancement-Mode. KTK5131E N CHANNEL MOS FIELD EFFECT TRANSISTOR E B 2 D 3 DIM A B C D E G H J MILLIMETERS _ 1.60 + 0.10 _ 0.85 + 0.10 _ 0.70 + 0.10 0.27+0.10/-0.05 _ 1.60 + 0.10 _ 1.00 + 0.10 0.50 _ 0.13 + 0.05 A G 1 H MAXIMUM RATING (Ta=25... ) CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage DC Drain Current Drain Power Dissipation Channel Temperature Storage Temperature Range SYMBOL VDS VGSS ID PD Tch Tstg RATING 30 ae20 50 100 150 -55150 UNIT V V mA mW ... ... 1. SOURCE 2. GATE 3. DRAIN J C ESM EQUIVALENT CIRCUIT D Marking G Type Name KA S THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE. PLEASE HANDLE WITH CAUTION. ELECTRICAL CHARACTERISTICS (Ta=25... ) CHARACTERISTIC Gate Leakage Current Drain-Source Breakdown Voltage Drain Cut-off Current Gate Threshold Voltage Forward Transfer Admittance Drain-Source ON Resistance Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Time Turn-on Time Turn-off Time SYMBOL IGSS V(BR)DSS IDSS Vth |Yfs| RDS(ON) Ciss Crss Coss ton toff TEST CONDITION VGS=ae16V, VDS=0V ID=100*IA, VGS=0V VDS=30V, VGS=0V VDS=3V, ID=0.1mA VDS=3V, ID=10mA ID=10mA, VGS=2.5V VDS=3V, VGS=0V, f=1MHz VDS=3V, VGS=0V, f=1MHz VDS=3V, VGS=0V, f=1MHz VDD=3V, ID=10mA, VGS=02.5V MIN. 30 0.5 20 TYP. 15 5.5 1.6 6.5 140 140 MAX. ae1 1 1.5 40 UNIT *IA V *IA V mS Y pF pF pF nS nS 2002. 6. 17 Revision No : 0 1/3 KTK5131E I D - V DS 60 DRAIN CURRENT I D (mA) 50 40 30 20 10 0 0 2 4 6 8 10 12 DRAIN-SOURCE VOLTAGE V DS (V) 2.5 2.2 COMMON SOURCE Ta=25 C I D - V DS (LOW VOLTAGE REGION) 1.2 DRAIN CURRENT I D (mA) 1.0 2.5 0.8 0.6 0.4 0.2 0 0 0.1 0.2 0.3 1.05 1.2 1.1 COMMON SOURCE Ta=25 C 2.0 1.8 1.6 1.4 VGS =1.2V 1.0 VGS =0.95V 0.9 0.8 0.4 0.5 0.6 DRAIN-SOURCE VOLTAGE VDS (V) I DR - V DS DRAIN REVERSE CURRENT I DR (mA) 50 30 10 3 1 0.3 0.1 0.03 0.01 0 -0.4 -0.8 -1.2 -1.6 DRAIN-SOURCE VOTAGE V DS (V) G S I D - VGS 50 30 DRAIN CURRENT ID (mA) 10 3 1 0.3 0.1 0.03 0.01 0 1 2 3 4 5 GATE-SOURCE VOTAGE V GS (V) Ta=25 C Ta=-25 C Ta=100 C COMMON SOURCE VGS =3V COMMON SOURCE VGS =0 Ta=25 C D I DR Y fs - I D FORWARD TRANSFER ADMITTANCE Yfs (mS) 100 50 30 COMMON SOURCE VDS =3V Ta=25 C C - V DS 30 CAPACITANCE C (pF) COMMON SOURCE VGS =0 f=1MHz Ta=25 C C iss Coss 10 5 3 10 5 3 1 3 5 10 30 50 100 DRAIN CURRENT I D (mA) C rss 1 0.5 100m 0.3 0.5 1 3 5 10 20 DRAIN-SOURCE VOLTAGE V DS (V) 2002. 6. 17 Revision No : 0 2/3 KTK5131E VDS(ON) - I D 3k DRAIN-SOURCE ON VOLTAGE VDS(ON) (mV) 1k 500 300 100 50 30 10 COMMON SOURCE VGS =2.5V Ta=25 C t - ID 1K 500 SWITCHING TIME t (ns) 300 t off tf t on tr ID 50 2.5V V IN 0 10s VOUT RL VDD =3V D.U. < 1% = VIN :t r , t f < 5ns (Z OUT =50) COMMON SOURCE Ta=25 C 100 50 30 VDD 1 3 5 10 30 50 100 10 0.3 1 3 10 30 100 DRAIN CURRENT ID (mA) DRAIN CURRENT I D (mA) P D - Ta DRAIN POWER DISSIPATION P D (mW) 150 100 50 0 0 20 40 60 80 100 120 140 160 AMBIENT TEMPERATURE Ta ( C) SWITCHING TIME TEST CIRCUIT ID 2.5V VIN 0 10s VIN RL 50 VOUT VDD =3V D.U. < 1% = V IN :t r , t f < 5ns (Z OUT =50) COMMON SOURCE Ta=25 C VIN 2.5V 10% 90% 0 V DD VOUT V DS (ON) 10% 90% tr t on t off tf VDD 2002. 6. 17 Revision No : 0 3/3 |
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